Advanced Materials

Low-Threshold Nanolasers Based on Slab-Nanocrystals of H-Aggregated Organic Semiconductors

Authors

  • Zhenzhen Xu,

    1. Beijing National Laboratory for Molecular Sciences (BNLMS), Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P.R. China
    2. Graduate University Chinese Academy of Sciences, Beijing 100049, P.R. China
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  • Qing Liao,

    1. Beijing National Laboratory for Molecular Sciences (BNLMS), Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P.R. China
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  • Qiang Shi,

    1. Beijing National Laboratory for Molecular Sciences (BNLMS), Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P.R. China
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  • Haoli Zhang,

    1. State Key Laboratory of Applied Organic Chemistry, College of Chemistry and Chemical Engineering, Lanzhou University, Lanzhou, 730000, P.R. China
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  • Jiannian Yao,

    1. Beijing National Laboratory for Molecular Sciences (BNLMS), Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P.R. China
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  • Hongbing Fu

    Corresponding author
    1. Beijing National Laboratory for Molecular Sciences (BNLMS), Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P.R. China
    • Beijing National Laboratory for Molecular Sciences (BNLMS), Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P.R. China.
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Abstract

Low-threshold nanolasers based on slab nanocrystals (SNCs) of highly emissive H-aggregated organic semiconductors are reported. A lasing threshold as low as 100 nJ cm−2 is achieved in a high-quality (cavity quality factor ≈ 1000) Fabry–Pérot cavity constituted by the two lateral-faces of SNCs at the wavelength scale. Moreover, the laser light generated in the ultrasmall radial cavity of SNCs can propagate along its length up to hundreds of micrometers, making them attractive building blocks for miniaturized photonic circuits.

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