Communication

High Thermal Responsiveness of a Reduced Graphene Oxide Field-Effect Transistor

  1. Tran Quang Trung2,
  2. Nguyen Thanh Tien2,
  3. Doil Kim2,
  4. Jin Heak Jung3,
  5. Ok Ja Yoon2,
  6. Nae-Eung Lee1,*

Article first published online: 18 JUL 2012

DOI: 10.1002/adma.201201724

Issue

Advanced Materials

Advanced Materials

Volume 24, Issue 38, pages 5254–5260, October 2, 2012

Additional Information

How to Cite

Trung, T. Q., Tien, N. T., Kim, D., Jung, J. H., Yoon, O. J. and Lee, N.-E. (2012), High Thermal Responsiveness of a Reduced Graphene Oxide Field-Effect Transistor. Adv. Mater., 24: 5254–5260. doi: 10.1002/adma.201201724

Author Information

  1. 1

    School of Advanced Materials, Science & Engineering, SKKU Advanced Institute of Nanotechnology (SAINT) and Samsung Advanced Institute for Health, Sciences & Technology (SAIHST), Sungkyunkwan University (SKKU), Suwon, Kyunggi 440 - 746, Korea

  2. 2

    School of Advanced Materials Science & Engineering, Sungkyunkwan University (SKKU), Suwon, Kyunggi 440-746, Korea

  3. 3

    SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, Kyunggi 440-746, Korea

*School of Advanced Materials, Science & Engineering, SKKU Advanced Institute of Nanotechnology (SAINT) and Samsung Advanced Institute for Health, Sciences & Technology (SAIHST), Sungkyunkwan University (SKKU), Suwon, Kyunggi 440 - 746, Korea.

Publication History

  1. Issue published online: 25 SEP 2012
  2. Article first published online: 18 JUL 2012
  3. Manuscript Revised: 26 JUN 2012
  4. Manuscript Received: 29 APR 2012

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Keywords:

  • field-effect transistors;
  • reduced graphene oxide;
  • thermal responsiveness;
  • sensors
Thumbnail image of graphical abstract

A reduced graphene oxide field-effect transistor (R-GO FET) device has a uniform self-assembled and networked channel of R-GO nanosheets that are highly responsive to physical stimuli such as temperature variations and infrared irradiation. The charge-transport mechanisms of the networked R-GO thin film include charge tunneling through the nanosheet junction and charge-hopping transport. Under a thermal or infrared (IR) stimulus, the charge carriers generated by thermal or IR activation contribute to changes in the charge transport inside the networked R-GO thin film.

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