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Advanced Materials

High Thermal Responsiveness of a Reduced Graphene Oxide Field-Effect Transistor

Authors

  • Tran Quang Trung,

    1. School of Advanced Materials Science & Engineering, Sungkyunkwan University (SKKU), Suwon, Kyunggi 440-746, Korea
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  • Nguyen Thanh Tien,

    1. School of Advanced Materials Science & Engineering, Sungkyunkwan University (SKKU), Suwon, Kyunggi 440-746, Korea
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  • Doil Kim,

    1. School of Advanced Materials Science & Engineering, Sungkyunkwan University (SKKU), Suwon, Kyunggi 440-746, Korea
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  • Jin Heak Jung,

    1. SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, Kyunggi 440-746, Korea
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  • Ok Ja Yoon,

    1. School of Advanced Materials Science & Engineering, Sungkyunkwan University (SKKU), Suwon, Kyunggi 440-746, Korea
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  • Nae-Eung Lee

    Corresponding author
    1. School of Advanced Materials, Science & Engineering, SKKU Advanced Institute of Nanotechnology (SAINT) and Samsung Advanced Institute for Health, Sciences & Technology (SAIHST), Sungkyunkwan University (SKKU), Suwon, Kyunggi 440 - 746, Korea
    • School of Advanced Materials, Science & Engineering, SKKU Advanced Institute of Nanotechnology (SAINT) and Samsung Advanced Institute for Health, Sciences & Technology (SAIHST), Sungkyunkwan University (SKKU), Suwon, Kyunggi 440 - 746, Korea.
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Abstract

A reduced graphene oxide field-effect transistor (R-GO FET) device has a uniform self-assembled and networked channel of R-GO nanosheets that are highly responsive to physical stimuli such as temperature variations and infrared irradiation. The charge-transport mechanisms of the networked R-GO thin film include charge tunneling through the nanosheet junction and charge-hopping transport. Under a thermal or infrared (IR) stimulus, the charge carriers generated by thermal or IR activation contribute to changes in the charge transport inside the networked R-GO thin film.

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