A reduced graphene oxide field-effect transistor (R-GO FET) device has a uniform self-assembled and networked channel of R-GO nanosheets that are highly responsive to physical stimuli such as temperature variations and infrared irradiation. The charge-transport mechanisms of the networked R-GO thin film include charge tunneling through the nanosheet junction and charge-hopping transport. Under a thermal or infrared (IR) stimulus, the charge carriers generated by thermal or IR activation contribute to changes in the charge transport inside the networked R-GO thin film.
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