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Keywords:

  • Si/SiGe strained quantum wells;
  • synchrotron X-ray nanodiffraction;
  • structural distortions;
  • thickness and strain variations
Thumbnail image of graphical abstract

Si quantum wells on plastically relaxed SiGe substrates have nanometer variations in crystallographic parameters crucial to quantum-information devices. Synchrotron X-ray nanodiffraction shows that the lattice of the Si quantum well varies in orientation and thickness over lateral distances of 100 nm to 1 μm. The result is that the energy levels of the confined states are shifted by energies similar to the electron temperature.