Phototransistors based on multilayer MoS2 crystals are demonstrated with a wider spectral response and higher photoresponsivity than single-layer MoS2 phototransistors. Multilayer MoS2 phototransistors further exhibit high room temperature mobilities (>70 cm2V−1s−1), near-ideal subthreshold swings (∼70 mV decade−1), low operating gate biases (<5 V), and negligible shifts in the threshold voltages during illumination.
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