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A Single-Device Universal Logic Gate Based on a Magnetically Enhanced Memristor

Authors

  • Mirko Prezioso,

    Corresponding author
    1. Consiglio Nazionale delle Ricerche - Istituto per lo, Studio dei Materiali Nanostrutturati, (CNR-ISMN) - via P. Gobetti 101, 40129 Bologna, Italy
    • Consiglio Nazionale delle Ricerche - Istituto per lo, Studio dei Materiali Nanostrutturati, (CNR-ISMN) - via P. Gobetti 101, 40129 Bologna, Italy.
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  • Alberto Riminucci,

    1. Consiglio Nazionale delle Ricerche - Istituto per lo, Studio dei Materiali Nanostrutturati, (CNR-ISMN) - via P. Gobetti 101, 40129 Bologna, Italy
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  • Patrizio Graziosi,

    1. Consiglio Nazionale delle Ricerche - Istituto per lo, Studio dei Materiali Nanostrutturati, (CNR-ISMN) - via P. Gobetti 101, 40129 Bologna, Italy
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  • Ilaria Bergenti,

    1. Consiglio Nazionale delle Ricerche - Istituto per lo, Studio dei Materiali Nanostrutturati, (CNR-ISMN) - via P. Gobetti 101, 40129 Bologna, Italy
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  • Rajib Rakshit,

    1. Consiglio Nazionale delle Ricerche - Istituto per lo, Studio dei Materiali Nanostrutturati, (CNR-ISMN) - via P. Gobetti 101, 40129 Bologna, Italy
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  • Raimondo Cecchini,

    1. Consiglio Nazionale delle Ricerche - Istituto per lo, Studio dei Materiali Nanostrutturati, (CNR-ISMN) - via P. Gobetti 101, 40129 Bologna, Italy
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  • Anna Vianelli,

    1. Consiglio Nazionale delle Ricerche - Istituto per lo, Studio dei Materiali Nanostrutturati, (CNR-ISMN) - via P. Gobetti 101, 40129 Bologna, Italy
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  • Francesco Borgatti,

    1. Consiglio Nazionale delle Ricerche - Istituto per lo, Studio dei Materiali Nanostrutturati, (CNR-ISMN) - via P. Gobetti 101, 40129 Bologna, Italy
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  • Norman Haag,

    1. Consiglio Nazionale delle Ricerche - Istituto per lo, Studio dei Materiali Nanostrutturati, (CNR-ISMN) - via P. Gobetti 101, 40129 Bologna, Italy
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  • M. Willis,

    1. School of Physics and Astronomy, Queen Mary University of London, Mile End Road, London, E1 4NS, UK
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  • Alan J. Drew,

    1. School of Physics and Astronomy, Queen Mary University of London, Mile End Road, London, E1 4NS, UK
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  • William P. Gillin,

    1. School of Physics and Astronomy, Queen Mary University of London, Mile End Road, London, E1 4NS, UK
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  • Valentin A. Dediu

    1. Consiglio Nazionale delle Ricerche - Istituto per lo, Studio dei Materiali Nanostrutturati, (CNR-ISMN) - via P. Gobetti 101, 40129 Bologna, Italy
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Abstract

Memristors are one of the most promising candidates for future information and communications technology (ICT) architectures. Two experimental proofs of concept are presented based on the intermixing of spintronic and memristive effects into a single device, a magnetically enhanced memristor (MEM). By exploiting the interaction between the memristance and the giant magnetoresistance (GMR), a universal implication (IMP) logic gate based on a single MEM device is realized.

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