Advanced Materials

Nearly Temperature-Independent Threshold for Amplified Spontaneous Emission in Colloidal CdSe/CdS Quantum Dot-in-Rods

Authors

  • Iwan Moreels,

    Corresponding author
    1. IBM Research - Zurich, Säumerstrasse 4, CH-8803 Rüschlikon, Switzerland
    2. Istituto Italiano di Tecnologia, via Morego 30, IT-16163 Genova, Italy
    • IBM Research - Zurich, Säumerstrasse 4, CH-8803 Rüschlikon, Switzerland.
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  • Gabriele Rainò,

    Corresponding author
    1. IBM Research - Zurich, Säumerstrasse 4, CH-8803 Rüschlikon, Switzerland
    • IBM Research - Zurich, Säumerstrasse 4, CH-8803 Rüschlikon, Switzerland.
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  • Raquel Gomes,

    1. Physics and Chemistry of Nanostructures, Ghent University, Krijgslaan 281-S3, BE-9000 Ghent, Belgium
    2. Center for Nano- and Biophotonics, Ghent University, Krijgslaan 281-S3, BE-9000 Ghent, Belgium
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  • Zeger Hens,

    1. Physics and Chemistry of Nanostructures, Ghent University, Krijgslaan 281-S3, BE-9000 Ghent, Belgium
    2. Center for Nano- and Biophotonics, Ghent University, Krijgslaan 281-S3, BE-9000 Ghent, Belgium
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  • Thilo Stöferle,

    1. IBM Research - Zurich, Säumerstrasse 4, CH-8803 Rüschlikon, Switzerland
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  • Rainer F. Mahrt

    1. IBM Research - Zurich, Säumerstrasse 4, CH-8803 Rüschlikon, Switzerland
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Abstract

By careful engineering of the core and shell dimensions in CdSe/CdS colloidal hetero-nanocrystals, amplified spontaneous emission can be triggered from either the core, shell, or both states simultaneously. The ASE threshold is almost constant over a temperature interval of 5–325 K. This feature is unique to quantum dots and highlights their potential as a gain material, suitable for lasing at elevated temperatures.

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