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High-Hole-Mobility Field-Effect Transistors Based on Co-Benzobisthiadiazole-Quaterthiophene



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High-mobility organic thin film transistors based on a benzobisthiadiazole-containing polymer are presented together with their morphological and optical properties. A very tight packing pattern of “edge-on” orientated polymer chains is observed in their thin films after annealing, and the hole mobility of this polymer is up to 2.5 cm2 V−1 s−1.