High-Hole-Mobility Field-Effect Transistors Based on Co-Benzobisthiadiazole-Quaterthiophene
Article first published online: 10 SEP 2012
Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Volume 24, Issue 46, pages 6164–6168, December 4, 2012
How to Cite
Fan, J., Yuen, J. D., Cui, W., Seifter, J., Mohebbi, A. R., Wang, M., Zhou, H., Heeger, A. and Wudl, F. (2012), High-Hole-Mobility Field-Effect Transistors Based on Co-Benzobisthiadiazole-Quaterthiophene. Adv. Mater., 24: 6164–6168. doi: 10.1002/adma.201202195
- Issue published online: 29 NOV 2012
- Article first published online: 10 SEP 2012
- Manuscript Revised: 8 AUG 2012
- Manuscript Received: 1 JUN 2012
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