Get access
Advanced Materials

Current-Confinement Structure and Extremely High Current Density in Organic Light-Emitting Transistors

Authors


Abstract

Extremely high current densities are realized in single-crystal ambipolar light-emitting transistors using an electron-injection buffer layer and a current-confinement structure via laser etching. Moreover, a linear increase in the luminance was observed at current densities of up to 1 kA cm−2, which is an efficiency-preservation improvement of three orders of magnitude over conventional organic light-emitting diodes (OLEDs) at high current densities.

original image
Get access to the full text of this article

Ancillary