Highly Air-Stable Phosphorus-Doped n-Type Graphene Field-Effect Transistors
Article first published online: 7 AUG 2012
Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Volume 24, Issue 40, pages 5481–5486, October 23, 2012
How to Cite
Some, S., Kim, J., Lee, K., Kulkarni, A., Yoon, Y., Lee, S., Kim, T. and Lee, H. (2012), Highly Air-Stable Phosphorus-Doped n-Type Graphene Field-Effect Transistors. Adv. Mater., 24: 5481–5486. doi: 10.1002/adma.201202255
- Issue published online: 12 OCT 2012
- Article first published online: 7 AUG 2012
- Manuscript Received: 5 JUN 2012
Detailed facts of importance to specialist readers are published as ”Supporting Information”. Such documents are peer-reviewed, but not copy-edited or typeset. They are made available as submitted by the authors.
Please note: Wiley Blackwell is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.