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Tailoring of Molecular Planarity to Reduce Charge Injection Barrier for High-Performance Small-Molecule-Based Ternary Memory Device with Low Threshold Voltage

Authors

  • Shifeng Miao,

    1. Key Laboratory of Organic Synthesis of Jiangsu Province, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou 215123, P. R. China
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  • Hua Li,

    1. Key Laboratory of Organic Synthesis of Jiangsu Province, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou 215123, P. R. China
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  • Qingfeng Xu,

    1. Key Laboratory of Organic Synthesis of Jiangsu Province, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou 215123, P. R. China
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  • Youyong Li,

    1. Functional Nano & Soft Materials Laboratory (FUNSOM), and Jiangsu Key Laboratory for Carbon-Based Functional, Materials & Devices, Soochow University, Suzhou 215123, P. R. China
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  • Shunjun Ji,

    1. Key Laboratory of Organic Synthesis of Jiangsu Province, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou 215123, P. R. China
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  • Najun Li,

    1. Key Laboratory of Organic Synthesis of Jiangsu Province, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou 215123, P. R. China
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  • Lihua Wang,

    1. Key Laboratory of Organic Synthesis of Jiangsu Province, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou 215123, P. R. China
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  • Junwei Zheng,

    1. Institute of Chemical Power Sources, Soochow University, Suzhou 215006, P. R. China
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  • Jianmei Lu

    Corresponding author
    1. Key Laboratory of Organic Synthesis of Jiangsu Province, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou 215123, P. R. China
    • Key Laboratory of Organic Synthesis of Jiangsu Province, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou 215123, P. R. China.
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Abstract

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By introducing a coplanar fluorenone into the center of an azo molecule, the turn-on voltages of the ternary memory devices are significantly decreased to lower than –2 V due to the improved crystallinity and the reduced charge injection barrier. The resulting low-power consumption devices will have great potential applications in high-performance chips for future portable nanoelectronic devices.

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