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Keywords:

  • block copolymer lithography;
  • silicon patterning;
  • cryo-ICP etching;
  • high selectivity etching;
  • nano-imprinting lithography
Thumbnail image of graphical abstract

High-aspect-ratio sub-15-nm silicon trenches are fabricated directly from plasma etching of a block copolymer mask. A novel method that combines a block copolymer reconstruction process and reactive ion etching is used to make the polymer mask. Silicon trenches are characterized by various methods and used as a master for subsequent imprinting of different materials. Silicon nanoholes are generated from a block copolymer with cylindrical microdomains oriented normal to the surface.