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High Aspect Ratio Sub-15 nm Silicon Trenches From Block Copolymer Templates

Authors

  • Xiaodan Gu,

    1. Department of Polymer Science and Engineering, University of Massachusetts Amherst, Amherst, Massachusetts 01003, USA
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  • Zuwei Liu,

    1. Oxford Instruments, Concord, MA 01742, USA
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  • Ilja Gunkel,

    1. Advanced Light Source, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720, USA
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  • S. T. Chourou,

    1. Advanced Light Source, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720, USA
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  • Sung Woo Hong,

    1. Department of Polymer Science and Engineering, University of Massachusetts Amherst, Amherst, Massachusetts 01003, USA
    Current affiliation:
    1. Samsung Advanced Institute of Technology (SAIT), Mt. 14-1, Nongseo-dong, Giheung-gu, Yongin-si, Gyeonggi-do 446-712, Republic of Korea
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  • Deirdre L. Olynick,

    Corresponding author
    1. Molecular Foundry, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720, USA
    • Molecular Foundry, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720, USA
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  • Thomas P. Russell

    Corresponding author
    1. Department of Polymer Science and Engineering, University of Massachusetts Amherst, Amherst, Massachusetts 01003, USA
    • Department of Polymer Science and Engineering, University of Massachusetts Amherst, Amherst, Massachusetts 01003, USA.
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Abstract

High-aspect-ratio sub-15-nm silicon trenches are fabricated directly from plasma etching of a block copolymer mask. A novel method that combines a block copolymer reconstruction process and reactive ion etching is used to make the polymer mask. Silicon trenches are characterized by various methods and used as a master for subsequent imprinting of different materials. Silicon nanoholes are generated from a block copolymer with cylindrical microdomains oriented normal to the surface.

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