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Communication

High Aspect Ratio Sub-15 nm Silicon Trenches From Block Copolymer Templates

  1. Xiaodan Gu1,
  2. Zuwei Liu3,
  3. Ilja Gunkel4,
  4. S. T. Chourou4,
  5. Sung Woo Hong1,†,
  6. Deirdre L. Olynick2,*,
  7. Thomas P. Russell1,*

Article first published online: 20 AUG 2012

DOI: 10.1002/adma.201202361

Issue

Advanced Materials

Advanced Materials

Volume 24, Issue 42, pages 5688–5694, November 8, 2012

Additional Information

How to Cite

Gu, X., Liu, Z., Gunkel, I., Chourou, S. T., Hong, S. W., Olynick, D. L. and Russell, T. P. (2012), High Aspect Ratio Sub-15 nm Silicon Trenches From Block Copolymer Templates. Adv. Mater., 24: 5688–5694. doi: 10.1002/adma.201202361

Author Information

  1. 1

    Department of Polymer Science and Engineering, University of Massachusetts Amherst, Amherst, Massachusetts 01003, USA

  2. 2

    Molecular Foundry, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720, USA

  3. 3

    Oxford Instruments, Concord, MA 01742, USA

  4. 4

    Advanced Light Source, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720, USA

  1. †

    Samsung Advanced Institute of Technology (SAIT), Mt. 14-1, Nongseo-dong, Giheung-gu, Yongin-si, Gyeonggi-do 446-712, Republic of Korea

*Molecular Foundry, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720, USA

Publication History

  1. Issue published online: 2 NOV 2012
  2. Article first published online: 20 AUG 2012
  3. Manuscript Revised: 6 JUL 2012
  4. Manuscript Received: 12 JUN 2012

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