Correspondence
Comment on Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte- Based ReRAM
Article first published online: 22 OCT 2012
DOI: 10.1002/adma.201202592
Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Additional Information
How to Cite
Valov, I. and Waser, R. (2013), Comment on Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte- Based ReRAM. Adv. Mater., 25: 162–164. doi: 10.1002/adma.201202592
Publication History
- Issue published online: 7 JAN 2013
- Article first published online: 22 OCT 2012
- Manuscript Revised: 27 JUL 2012
- Manuscript Received: 26 JUN 2012
Keywords:
- electronic devices;
- nonvolatile memory;
- ReRAM;
- solid electrolytes
Abstract
Filament formation and dissolution in the system Ag(Cu)/ZrO2/Pt were observed by Liu et al. [Adv. Mater. 2012, 24, 1844]. Their explanation of the phenomena is shown here to be inappropriate. Various situations, including the “bipolar electrode” shown in the figure, are considered and the difference between the behavior in electrochemical metallization memories (ECMs) and valence change memories (VCMs) outlined. Of crucial importance for distinguishing ECM from VCM behavior, that is, the effects of cation and anion migration, is the choice of the solid materials used to transport metal cations. A possible explanation of the phenomena is proposed.

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