SEARCH

SEARCH BY CITATION

Keywords:

  • spin amplifiers;
  • spintronics;
  • room temperature;
  • defects;
  • semiconductors
Thumbnail image of graphical abstract

The first experimental demonstration of a spin amplifier at room temperature is presented. An efficient, defect-enabled spin amplifier based on a non-magnetic semiconductor, Ga(In)NAs, is proposed and demonstrated, with a large spin gain (up to 2700% at zero field) for conduction electrons and a high cut-off frequency of up to 1 GHz.