Communication

Room-Temperature Electron Spin Amplifier Based on Ga(In)NAs Alloys

  1. Yuttapoom Puttisong1,
  2. Irina A. Buyanova1,
  3. Aaron J. Ptak2,
  4. Charles W. Tu3,
  5. Lutz Geelhaar4,
  6. Henning Riechert4,
  7. Weimin M. Chen1,*

Article first published online: 26 OCT 2012

DOI: 10.1002/adma.201202597

Issue

Advanced Materials

Advanced Materials

Volume 25, Issue 5, pages 738–742, February 6, 2013

Additional Information

How to Cite

Puttisong, Y., Buyanova, I. A., Ptak, A. J., Tu, C. W., Geelhaar, L., Riechert, H. and Chen, W. M. (2013), Room-Temperature Electron Spin Amplifier Based on Ga(In)NAs Alloys. Adv. Mater., 25: 738–742. doi: 10.1002/adma.201202597

Author Information

  1. 1

    Department of Physics, Chemistry and Biology, Linköping University, S-581 83 Linköping, Sweden

  2. 2

    National Renewable Energy Laboratory, Golden, CO 80401, USA

  3. 3

    Department of Electrical and Computer Engineering, University of California, La Jolla, CA 92093, USA

  4. 4

    Paul-Drude-Institut für Festkörpelektronik, 10117 Berlin, Germany

*Department of Physics, Chemistry and Biology, Linköping University, S-581 83 Linköping, Sweden.

Publication History

  1. Issue published online: 5 FEB 2013
  2. Article first published online: 26 OCT 2012
  3. Manuscript Received: 27 JUN 2012

SEARCH

SEARCH BY CITATION

ARTICLE TOOLS

View Full Article with Supporting Information (HTML) Get PDF (783K)

Keywords:

  • spin amplifiers;
  • spintronics;
  • room temperature;
  • defects;
  • semiconductors
Thumbnail image of graphical abstract

The first experimental demonstration of a spin amplifier at room temperature is presented. An efficient, defect-enabled spin amplifier based on a non-magnetic semiconductor, Ga(In)NAs, is proposed and demonstrated, with a large spin gain (up to 2700% at zero field) for conduction electrons and a high cut-off frequency of up to 1 GHz.

View Full Article with Supporting Information (HTML) Get PDF (783K)