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Advanced Materials

High Performance Ambipolar Field-Effect Transistor of Random Network Carbon Nanotubes

Authors

  • Satria Zulkarnaen Bisri,

    Corresponding author
    1. Photophysics and Optoelectronics Group, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, Groningen 9747 AG, The Netherlands
    • Photophysics and Optoelectronics Group, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, Groningen 9747 AG, The Netherlands.
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  • Jia Gao,

    1. Photophysics and Optoelectronics Group, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, Groningen 9747 AG, The Netherlands
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  • Vladimir Derenskyi,

    1. Photophysics and Optoelectronics Group, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, Groningen 9747 AG, The Netherlands
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  • Widianta Gomulya,

    1. Photophysics and Optoelectronics Group, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, Groningen 9747 AG, The Netherlands
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  • Igor Iezhokin,

    1. Photophysics and Optoelectronics Group, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, Groningen 9747 AG, The Netherlands
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  • Pavlo Gordiichuk,

    1. Polymer Chemistry and Bioengineering Group, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, Groningen 9747 AG, The Netherlands
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  • Andreas Herrmann,

    1. Polymer Chemistry and Bioengineering Group, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, Groningen 9747 AG, The Netherlands
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  • Maria Antonietta Loi

    Corresponding author
    1. Photophysics and Optoelectronics Group, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, Groningen 9747 AG, The Netherlands
    • Photophysics and Optoelectronics Group, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, Groningen 9747 AG, The Netherlands.
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Abstract

Ambipolar field-effect transistors of random network carbon nanotubes are fabricated from an enriched dispersion utilizing a conjugated polymer as the selective purifying medium. The devices exhibit high mobility values for both holes and electrons (3 cm2/V·s) with a high on/off ratio (106). The performance demonstrates the effectiveness of this process to purify semiconducting nanotubes and to remove the residual polymer.

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