High Performance Ambipolar Field-Effect Transistor of Random Network Carbon Nanotubes
Version of Record online: 24 SEP 2012
Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Volume 24, Issue 46, pages 6147–6152, December 4, 2012
How to Cite
Bisri, S. Z., Gao, J., Derenskyi, V., Gomulya, W., Iezhokin, I., Gordiichuk, P., Herrmann, A. and Loi, M. A. (2012), High Performance Ambipolar Field-Effect Transistor of Random Network Carbon Nanotubes. Adv. Mater., 24: 6147–6152. doi: 10.1002/adma.201202699
- Issue online: 29 NOV 2012
- Version of Record online: 24 SEP 2012
- Manuscript Revised: 20 AUG 2012
- Manuscript Received: 4 JUL 2012
Detailed facts of importance to specialist readers are published as ”Supporting Information”. Such documents are peer-reviewed, but not copy-edited or typeset. They are made available as submitted by the authors.
Please note: Wiley Blackwell is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.