Advanced Materials

Width-Tunable Graphene Nanoribbons on a SiC Substrate with a Controlled Step Height

Authors

  • Qingsong Huang,

    1. Department of Nuclear and Quantum Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 305-701, Republic of Korea
    2. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100190, P. R. China
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  • Jae Joon Kim,

    1. Department of Nuclear and Quantum Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 305-701, Republic of Korea
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  • Ghafar Ali,

    1. Department of Nuclear and Quantum Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 305-701, Republic of Korea
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  • Sung Oh Cho

    Corresponding author
    1. Department of Nuclear and Quantum Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 305-701, Republic of Korea
    • Department of Nuclear and Quantum Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 305-701, Republic of Korea.
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Abstract

An approach to fabricate large-scale graphene nanoribbons (GNRs) with tunable ribbon widths is presented. Regular steps with variable heights from 1 to 100 nm can be prepared on a SiC substrate by a low-pressure etching process. Graphene can be epitaxially grown only on the side walls of the steps, thereby leading to GNRs with controllable widths.

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