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Advanced Materials

Hole-Transporting Transistors and Circuits Based on the Transparent Inorganic Semiconductor Copper(I) Thiocyanate (CuSCN) Processed from Solution at Room Temperature

Authors

  • Pichaya Pattanasattayavong,

    1. Centre for Plastic Electronics and Department of Physics, Blackett Laboratory, Imperial College London, London SW7 2AZ, UK
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  • Nir Yaacobi-Gross,

    1. Centre for Plastic Electronics and Department of Physics, Blackett Laboratory, Imperial College London, London SW7 2AZ, UK
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  • Kui Zhao,

    1. Materials Science and Engineering, Division of Physical Sciences and Engineering, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia
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  • Guy Olivier Ngongang Ndjawa,

    1. Materials Science and Engineering, Division of Physical Sciences and Engineering, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia
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  • Jinhua Li,

    1. Department of Applied Physics and Materials Research Centre, The Hong Kong Polytechnic University, Hong Kong, China
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  • Feng Yan,

    1. Department of Applied Physics and Materials Research Centre, The Hong Kong Polytechnic University, Hong Kong, China
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  • Brian C. O'Regan,

    1. Centre for Plastic Electronics and Department of Chemistry, Imperial College London, London SW7 2AZ, UK
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  • Aram Amassian,

    Corresponding author
    1. Materials Science and Engineering, Division of Physical Sciences and Engineering, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia
    • Materials Science and Engineering, Division of Physical Sciences and Engineering, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia.
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  • Thomas D. Anthopoulos

    Corresponding author
    1. Centre for Plastic Electronics and Department of Physics, Blackett Laboratory, Imperial College London, London SW7 2AZ, UK
    • Centre for Plastic Electronics and Department of Physics, Blackett Laboratory, Imperial College London, London SW7 2AZ, UK
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Abstract

The wide bandgap and highly transparent inorganic compound copper(I) thiocyanate (CuSCN) is used for the first time to fabricate p-type thin-film transistors processed from solution at room temperature. By combining CuSCN with the high-k relaxor ferroelectric polymeric dielectric P(VDF-TrFE-CFE), we demonstrate low-voltage transistors with hole mobilities on the order of 0.1 cm2 V−1 s−1. By integrating two CuSCN transistors, unipolar logic NOT gates are also demonstrated.

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