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Advanced Materials

Remarkable Mobility Increase and Threshold Voltage Reduction in Organic Field-Effect Transistors by Overlaying Discontinuous Nano-Patches of Charge-Transfer Doping Layer on Top of Semiconducting Film

Authors

  • Jong H. Kim,

    1. Center for Supramolecular Optoelectronic Materials and WCU Hybrid Materials Program, Department of Materials Science and Engineering, Seoul National University, Seoul 151-744, Korea
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  • Sun Woo Yun,

    1. Center for Supramolecular Optoelectronic Materials and WCU Hybrid Materials Program, Department of Materials Science and Engineering, Seoul National University, Seoul 151-744, Korea
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  • Byeong-Kwan An,

    1. Department of Chemistry, The Catholic University of Korea, Bucheon-si, Geyonggi-do, 420-753, Korea
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  • Yoon Deok Han,

    1. Department of Physics, Korea University, Seoul, 136-713, Korea
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  • Seong-Jun Yoon,

    1. Center for Supramolecular Optoelectronic Materials and WCU Hybrid Materials Program, Department of Materials Science and Engineering, Seoul National University, Seoul 151-744, Korea
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  • Jinsoo Joo,

    1. Department of Physics, Korea University, Seoul, 136-713, Korea
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  • Soo Young Park

    Corresponding author
    1. Center for Supramolecular Optoelectronic Materials and WCU Hybrid Materials Program, Department of Materials Science and Engineering, Seoul National University, Seoul 151-744, Korea
    • Center for Supramolecular Optoelectronic Materials and WCU Hybrid Materials Program, Department of Materials Science and Engineering, Seoul National University, Seoul 151-744, Korea.
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Abstract

An effective strategy for significantly increasing the organic transistor mobility with simultaneous reduction of the threshold voltage utilizing discontinuous nano-patches of charge-transfer doping layer is demonstrated. By overlaying the nano-patches on top of a given semiconducting film, mobility and threshold voltage of p-type pentacene are remarkably improved to 4.52 cm2 V−1s−1 and −0.4 V, and those of n-type Hex-4-TFPTA are also improved to 2.57 cm2 V−1s−1 and 4.1 V.

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