Communication
N-Type Colloidal-Quantum-Dot Solids for Photovoltaics
Article first published online: 12 SEP 2012
DOI: 10.1002/adma.201202825
Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Additional Information
How to Cite
Zhitomirsky, D., Furukawa, M., Tang, J., Stadler, P., Hoogland, S., Voznyy, O., Liu, H. and Sargent, E. H. (2012), N-Type Colloidal-Quantum-Dot Solids for Photovoltaics. Adv. Mater., 24: 6181–6185. doi: 10.1002/adma.201202825
Publication History
- Issue published online: 29 NOV 2012
- Article first published online: 12 SEP 2012
- Manuscript Revised: 16 AUG 2012
- Manuscript Received: 12 JUL 2012
Keywords:
- n-type materials;
- doping;
- PbS;
- colloidal quantum dots;
- photovoltaics
N-type PbS colloidal-quantum-dot (CQD) films are fabricated using a controlled halide chemical treatment, applied in an inert processing ambient environment. The new materials exhibit a mobility of 0.1 cm2 V−1 s−1. The halogen ions serve both as a passivating agent and n-dope the films via substitution at surface chalcogen sites. The majority electron concentration across the range 1016 to 1018 cm−3 is varied systematically.

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