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Advanced Materials

N-Type Colloidal-Quantum-Dot Solids for Photovoltaics

Authors

  • David Zhitomirsky,

    1. Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
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  • Melissa Furukawa,

    1. Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
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  • Jiang Tang,

    1. Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, 1037 Luoyu Rd., Wuhan, Hubei 430074, China
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  • Philipp Stadler,

    1. Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
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  • Sjoerd Hoogland,

    1. Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
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  • Oleksandr Voznyy,

    1. Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
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  • Huan Liu,

    1. Department of Electronic Science and Technology, Huazhong University of Science and Technology, 1037 Luoyu Rd., Wuhan, Hubei 430074, China
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  • Edward H. Sargent

    Corresponding author
    1. Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
    • Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada.
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Abstract

N-type PbS colloidal-quantum-dot (CQD) films are fabricated using a controlled halide chemical treatment, applied in an inert processing ambient environment. The new materials exhibit a mobility of 0.1 cm2 V−1 s−1. The halogen ions serve both as a passivating agent and n-dope the films via substitution at surface chalcogen sites. The majority electron concentration across the range 1016 to 1018 cm−3 is varied systematically.

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