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Keywords:

  • two-stage growth;
  • metal-catalyst-free growth;
  • polycrystalline graphene;
  • silicon nitride
Thumbnail image of graphical abstract

By using two-stage, metal-catalyst-free chemical vapor deposition (CVD), it is demonstrated that high-quality polycrystalline graphene films can directly grow on silicon nitride substrates. The carrier mobility can reach about 1500 cm2 V−1 s−1, which is about three times the value of those grown on SiO2/Si substrates, and also is better than some examples of metal-catalyzed graphene, reflecting the good quality of the graphene lattice.