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Transparent High-Performance Thin Film Transistors from Solution-Processed SnO2/ZrO2 Gel-like Precursors

Authors

  • Jaewon Jang,

    1. Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA 94720-1770
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  • Rungrot Kitsomboonloha,

    1. Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA 94720-1770
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  • Sarah L. Swisher,

    1. Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA 94720-1770
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  • Eung Seok Park,

    1. Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA 94720-1770
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  • Hongki Kang,

    1. Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA 94720-1770
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  • Vivek Subramanian

    Corresponding author
    1. Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA 94720-1770
    2. World Class University Program, Sunchon National University, 413 Jungangro (315 Maegok), Suncheon, Jeonnam, 540-742, South Korea
    • Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA 94720-1770.
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Errata

This article is corrected by:

  1. Errata: Transparent High-Performance Thin Film Transistors from Solution-Processed SnO2/ZrO2 Gel-like Precursors Volume 26, Issue 26, 4412, Article first published online: 8 July 2014

Abstract

This work employs novel SnO2 gel-like precursors in conjunction with sol–gel deposited ZrO2 gate dielectrics to realize high-performance transparent transistors. Representative devices show excellent performance and transparency, and deliver mobility of 103 cm2 V−1 s−1 in saturation at operation voltages as low as 2 V, a sub-threshold swing of only 0.3 V/decade, and Ion/Ioff of 104∼105.

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