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Mid-Infrared HgTe/As2S3 Field Effect Transistors and Photodetectors

  1. Emmanuel Lhuillier,
  2. Sean Keuleyan,
  3. Pavlo Zolotavin,
  4. Philippe Guyot-Sionnest*

Article first published online: 2 OCT 2012

DOI: 10.1002/adma.201203012

Issue

Advanced Materials

Advanced Materials

Volume 25, Issue 1, pages 137–141, January 4, 2013

Additional Information

How to Cite

Lhuillier, E., Keuleyan, S., Zolotavin, P. and Guyot-Sionnest, P. (2013), Mid-Infrared HgTe/As2S3 Field Effect Transistors and Photodetectors. Adv. Mater., 25: 137–141. doi: 10.1002/adma.201203012

Author Information

  1. James Franck Institute, 929 E. 57th Street, The University of Chicago, Chicago, IL 60637, USA

*James Franck Institute, 929 E. 57th Street, The University of Chicago, Chicago, IL 60637, USA.

Publication History

  1. Issue published online: 2 JAN 2013
  2. Article first published online: 2 OCT 2012
  3. Manuscript Revised: 4 SEP 2012
  4. Manuscript Received: 25 JUL 2012

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Keywords:

  • HgTe;
  • As2S3;
  • colloidal quantum dot;
  • inorganic matrix;
  • field effect transistors;
  • mid-IR;
  • photodetection
Thumbnail image of graphical abstract

HgTe colloidal quantum dots (CQD) in an inorganic As2S3 matrix allow 100-fold higher mobility with optimized transport properties compared to HgTe-organic CQD film while remaining intrinsic. The material's electronic properties are measured by field effect transistors as a function of temperature and the responsivity and detectivity of the mid-IR photoconductors are discussed.

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