Mid-Infrared HgTe/As2S3 Field Effect Transistors and Photodetectors
Article first published online: 2 OCT 2012
Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Volume 25, Issue 1, pages 137–141, January 4, 2013
How to Cite
Lhuillier, E., Keuleyan, S., Zolotavin, P. and Guyot-Sionnest, P. (2013), Mid-Infrared HgTe/As2S3 Field Effect Transistors and Photodetectors. Adv. Mater., 25: 137–141. doi: 10.1002/adma.201203012
- Issue published online: 2 JAN 2013
- Article first published online: 2 OCT 2012
- Manuscript Revised: 4 SEP 2012
- Manuscript Received: 25 JUL 2012
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