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Advanced Materials

Mid-Infrared HgTe/As2S3 Field Effect Transistors and Photodetectors

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Abstract

HgTe colloidal quantum dots (CQD) in an inorganic As2S3 matrix allow 100-fold higher mobility with optimized transport properties compared to HgTe-organic CQD film while remaining intrinsic. The material's electronic properties are measured by field effect transistors as a function of temperature and the responsivity and detectivity of the mid-IR photoconductors are discussed.

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