Communication

Active Control of Ferroelectric Switching Using Defect-Dipole Engineering

  1. Daesu Lee1,
  2. Byung Chul Jeon1,
  3. Seung Hyub Baek3,
  4. Sang Mo Yang1,
  5. Yeong Jae Shin1,
  6. Tae Heon Kim1,
  7. Yong Su Kim1,
  8. Jong-Gul Yoon2,
  9. Chang Beom Eom3,
  10. Tae Won Noh1,*

Article first published online: 1 OCT 2012

DOI: 10.1002/adma.201203101

Issue

Advanced Materials

Advanced Materials

Volume 24, Issue 48, pages 6490–6495, December 18, 2012

Additional Information

How to Cite

Lee, D., Jeon, B. C., Baek, S. H., Yang, S. M., Shin, Y. J., Kim, T. H., Kim, Y. S., Yoon, J.-G., Eom, C. B. and Noh, T. W. (2012), Active Control of Ferroelectric Switching Using Defect-Dipole Engineering. Adv. Mater., 24: 6490–6495. doi: 10.1002/adma.201203101

Author Information

  1. 1

    IBS-Center for Functional Interfaces of Correlated Electron Systems and Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Korea

  2. 2

    Department of Physics, University of Suwon, Suwon, Gyunggi-do 445-743, Korea

  3. 3

    Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA

*IBS-Center for Functional Interfaces of Correlated Electron Systems and Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Korea.

Publication History

  1. Issue published online: 12 DEC 2012
  2. Article first published online: 1 OCT 2012
  3. Manuscript Revised: 5 SEP 2012
  4. Manuscript Received: 30 JUL 2012

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Keywords:

  • ferroelectrics;
  • defect engineering;
  • piezoresponse force microscopy;
  • nonvolatile memory
Thumbnail image of graphical abstract

Active control of defect structures and associated polarization switching in a ferroelectric material is achieved without compromising its ferroelectric properties. Based on dipolar interaction between defect dipole and polarization, the unique functionality of the defect dipole to control ferroelectric switching is visualized. This approach can provide a foundation for novel ferroelectric applications, such as high-density multilevel data storage.

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