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Advanced Materials

Active Control of Ferroelectric Switching Using Defect-Dipole Engineering

Authors

  • Daesu Lee,

    1. IBS-Center for Functional Interfaces of Correlated Electron Systems and Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Korea
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  • Byung Chul Jeon,

    1. IBS-Center for Functional Interfaces of Correlated Electron Systems and Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Korea
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  • Seung Hyub Baek,

    1. Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA
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  • Sang Mo Yang,

    1. IBS-Center for Functional Interfaces of Correlated Electron Systems and Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Korea
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  • Yeong Jae Shin,

    1. IBS-Center for Functional Interfaces of Correlated Electron Systems and Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Korea
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  • Tae Heon Kim,

    1. IBS-Center for Functional Interfaces of Correlated Electron Systems and Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Korea
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  • Yong Su Kim,

    1. IBS-Center for Functional Interfaces of Correlated Electron Systems and Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Korea
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  • Jong-Gul Yoon,

    1. Department of Physics, University of Suwon, Suwon, Gyunggi-do 445-743, Korea
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  • Chang Beom Eom,

    1. Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA
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  • Tae Won Noh

    Corresponding author
    1. IBS-Center for Functional Interfaces of Correlated Electron Systems and Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Korea
    • IBS-Center for Functional Interfaces of Correlated Electron Systems and Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Korea.
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Abstract

Active control of defect structures and associated polarization switching in a ferroelectric material is achieved without compromising its ferroelectric properties. Based on dipolar interaction between defect dipole and polarization, the unique functionality of the defect dipole to control ferroelectric switching is visualized. This approach can provide a foundation for novel ferroelectric applications, such as high-density multilevel data storage.

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