Communication

Unveiling Self-Assembled Monolayers' Potential for Molecular Spintronics: Spin Transport at High Voltage

  1. Marta Galbiati,
  2. Clément Barraud,
  3. Sergio Tatay,
  4. Karim Bouzehouane,
  5. Cyrile Deranlot,
  6. Eric Jacquet,
  7. Albert Fert,
  8. Pierre Seneor*,
  9. Richard Mattana*,
  10. Frédéric Petroff

Article first published online: 11 OCT 2012

DOI: 10.1002/adma.201203136

Issue

Advanced Materials

Advanced Materials

Volume 24, Issue 48, pages 6429–6432, December 18, 2012

Additional Information

How to Cite

Galbiati, M., Barraud, C., Tatay, S., Bouzehouane, K., Deranlot, C., Jacquet, E., Fert, A., Seneor, P., Mattana, R. and Petroff, F. (2012), Unveiling Self-Assembled Monolayers' Potential for Molecular Spintronics: Spin Transport at High Voltage. Adv. Mater., 24: 6429–6432. doi: 10.1002/adma.201203136

Author Information

  1. Unité Mixte de Physique CNRS/Thales, 1 Av. A. Fresnel, 91767 Palaiseau, France and Université Paris-Sud, 91405 Orsay, France

*Unité Mixte de Physique CNRS/Thales, 1 Av. A. Fresnel, 91767 Palaiseau, France and Université Paris-Sud, 91405 Orsay, France.

Publication History

  1. Issue published online: 12 DEC 2012
  2. Article first published online: 11 OCT 2012
  3. Manuscript Revised: 3 SEP 2012
  4. Manuscript Received: 31 JUL 2012

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Keywords:

  • molecular spintronics;
  • magnetic tunnel junctions;
  • tunnel magnetoresistance;
  • self-assembled monolayers
Thumbnail image of graphical abstract

Molecular magnetic tunnel junctions using self-assembled monolayers (SAMs) as tunnel barriers show stable and efficient spin transport properties. Large tunnel magnetoresistance with a flat bias voltage dependence of the magnetoresistance is observed in La2/3Sr1/3MnO3/dodecylphosphonic acid SAM/Co nanocontacts. This opens the door to spintronic tailoring though SAM engineering and could also lead to new venues for spin injection in organic devices.

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