Get access
Advertisement

Nano-Newton Transverse Force Sensor Using a Vertical GaN Nanowire based on the Piezotronic Effect

Authors


Abstract

original image

Enhanced transverse force sensitivity of vertically aligned GaN nanowires is demonstrated using the piezotronic effect. The transverse force sensitivity is calculated to be 1.24 ± 0.13 ln(A)/nN, with a resolution better than 16 nN and the response time less than 5 ms. The nano-Newton force resolution shows the potential for piezoelectric semiconductor materials to be used as the main building block for micro-/nanosensor arrays or artificial skin.

Get access to the full text of this article

Ancillary