Get access
Advanced Materials

Enhanced Charge Carrier Mobility in Two-Dimensional High Dielectric Molybdenum Oxide

Authors

  • Sivacarendran Balendhran,

    Corresponding author
    1. MicroNanoElectronics and Sensor Technology, Research Group and Functional Materials and Microsystems Research Group, School of Electrical and Computer Engineering, RMIT University, Melbourne, Victoria, Australia
    • MicroNanoElectronics and Sensor Technology, Research Group and Functional Materials and Microsystems Research Group, School of Electrical and Computer Engineering, RMIT University, Melbourne, Victoria, Australia
    Search for more papers by this author
  • Junkai Deng,

    1. Department of Materials Engineering, Monash University, Clayton, Victoria, Australia
    Search for more papers by this author
  • Jian Zhen Ou,

    1. MicroNanoElectronics and Sensor Technology, Research Group and Functional Materials and Microsystems Research Group, School of Electrical and Computer Engineering, RMIT University, Melbourne, Victoria, Australia
    Search for more papers by this author
  • Sumeet Walia,

    1. MicroNanoElectronics and Sensor Technology, Research Group and Functional Materials and Microsystems Research Group, School of Electrical and Computer Engineering, RMIT University, Melbourne, Victoria, Australia
    Search for more papers by this author
  • James Scott,

    1. MicroNanoElectronics and Sensor Technology, Research Group and Functional Materials and Microsystems Research Group, School of Electrical and Computer Engineering, RMIT University, Melbourne, Victoria, Australia
    Search for more papers by this author
  • Jianshi Tang,

    1. Device Research Laboratory, Department of Electrical Engineering, University of California, Los Angeles, California, USA
    Search for more papers by this author
  • Kang L. Wang,

    1. Device Research Laboratory, Department of Electrical Engineering, University of California, Los Angeles, California, USA
    Search for more papers by this author
  • Matthew R. Field,

    1. School of Applied Sciences, RMIT University, Melbourne, Victoria, Australia
    Search for more papers by this author
  • Salvy Russo,

    1. School of Applied Sciences, RMIT University, Melbourne, Victoria, Australia
    Search for more papers by this author
  • Serge Zhuiykov,

    1. Materials Science and Engineering Division, CSIRO, Highett, Victoria, Australia
    Search for more papers by this author
  • Michael S. Strano,

    1. Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts, USA
    Search for more papers by this author
  • Nikhil Medhekar,

    Corresponding author
    1. Department of Materials Engineering, Monash University, Clayton, Victoria, Australia
    • Department of Materials Engineering, Monash University, Clayton, Victoria, Australia.
    Search for more papers by this author
  • Sharath Sriram,

    1. MicroNanoElectronics and Sensor Technology, Research Group and Functional Materials and Microsystems Research Group, School of Electrical and Computer Engineering, RMIT University, Melbourne, Victoria, Australia
    Search for more papers by this author
  • Madhu Bhaskaran,

    Corresponding author
    1. MicroNanoElectronics and Sensor Technology, Research Group and Functional Materials and Microsystems Research Group, School of Electrical and Computer Engineering, RMIT University, Melbourne, Victoria, Australia
    • MicroNanoElectronics and Sensor Technology, Research Group and Functional Materials and Microsystems Research Group, School of Electrical and Computer Engineering, RMIT University, Melbourne, Victoria, Australia
    Search for more papers by this author
  • Kourosh Kalantar-zadeh

    Corresponding author
    1. MicroNanoElectronics and Sensor Technology, Research Group and Functional Materials and Microsystems Research Group, School of Electrical and Computer Engineering, RMIT University, Melbourne, Victoria, Australia
    • MicroNanoElectronics and Sensor Technology, Research Group and Functional Materials and Microsystems Research Group, School of Electrical and Computer Engineering, RMIT University, Melbourne, Victoria, Australia
    Search for more papers by this author

Abstract

We demonstrate that the energy bandgap of layered, high-dielectric α-MoO3 can be reduced to values viable for the fabrication of 2D electronic devices. This is achieved through embedding Coulomb charges within the high dielectric media, advantageously limiting charge scattering. As a result, devices with α-MoO3 of ∼11 nm thickness and carrier mobilities larger than 1100 cm2 V−1 s−1 are obtained.

original image
Get access to the full text of this article

Ancillary