Communication

Fabrication of Flexible, All-Reduced Graphene Oxide Non-Volatile Memory Devices

  1. Juqing Liu1,
  2. Zongyou Yin1,
  3. Xiehong Cao1,
  4. Fei Zhao2,
  5. Lianhui Wang2,
  6. Wei Huang2,3,
  7. Hua Zhang1,*

Article first published online: 26 OCT 2012

DOI: 10.1002/adma.201203349

Issue

Advanced Materials

Advanced Materials

Volume 25, Issue 2, pages 233–238, January 11, 2013

Additional Information

How to Cite

Liu, J., Yin, Z., Cao, X., Zhao, F., Wang, L., Huang, W. and Zhang, H. (2013), Fabrication of Flexible, All-Reduced Graphene Oxide Non-Volatile Memory Devices. Adv. Mater., 25: 233–238. doi: 10.1002/adma.201203349

Author Information

  1. 1

    School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore

  2. 2

    Key Laboratory for Organic Electronics & Information Displays (KLOEID), Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, Nanjing 210046, P. R. China

  3. 3

    Singapore-Jiangsu Joint Research Center for Organic/Bio-Electronics and Information Displays, Institute of Advanced Materials (IAM), Nanjing University of Technology, Nanjing 211816, P. R. China

*School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore.

Publication History

  1. Issue published online: 7 JAN 2013
  2. Article first published online: 26 OCT 2012
  3. Manuscript Received: 14 AUG 2012

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Keywords:

  • graphene;
  • reduced graphene oxide;
  • flexible;
  • solution process;
  • memory device
Thumbnail image of graphical abstract

A flexible, all reduced graphene oxide non-volatile memory device, with lightly reduced GO as an active layer and highly reduced GO as both top and bottom electrodes, is fabricated by a full-solution process and its performance is characterized. It provides a convenient method to construct other all-carbon devices.

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