Advanced Materials

Electron Doping by Charge Transfer at LaFeO3/Sm2CuO4 Epitaxial Interfaces

Authors

  • Flavio Y. Bruno,

    Corresponding author
    1. GFMC. Dpto. Física Aplicada III, Universidad Complutense de Madrid, Campus Moncloa, Madrid, 28040, Spain
    • GFMC. Dpto. Física Aplicada III, Universidad Complutense de Madrid, Campus Moncloa, Madrid, 28040, Spain.
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  • Rainer Schmidt,

    1. GFMC. Dpto. Física Aplicada III, Universidad Complutense de Madrid, Campus Moncloa, Madrid, 28040, Spain
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  • Maria Varela,

    1. GFMC. Dpto. Física Aplicada III, Universidad Complutense de Madrid, Campus Moncloa, Madrid, 28040, Spain
    2. Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6071, USA
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  • Javier Garcia-Barriocanal,

    1. GFMC. Dpto. Física Aplicada III, Universidad Complutense de Madrid, Campus Moncloa, Madrid, 28040, Spain
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  • Alberto Rivera-Calzada,

    1. GFMC. Dpto. Física Aplicada III, Universidad Complutense de Madrid, Campus Moncloa, Madrid, 28040, Spain
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  • Fabian A. Cuellar,

    1. GFMC. Dpto. Física Aplicada III, Universidad Complutense de Madrid, Campus Moncloa, Madrid, 28040, Spain
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  • Carlos Leon,

    1. GFMC. Dpto. Física Aplicada III, Universidad Complutense de Madrid, Campus Moncloa, Madrid, 28040, Spain
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  • Pardeep Thakur,

    1. European Synchrotron Radiation Facility (ESRF), 6 rue Jules Horowitz, B.P. 220, Grenoble Cedex 38043, France
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  • Julio C. Cezar,

    1. European Synchrotron Radiation Facility (ESRF), 6 rue Jules Horowitz, B.P. 220, Grenoble Cedex 38043, France
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  • Nicholas B. Brookes,

    1. European Synchrotron Radiation Facility (ESRF), 6 rue Jules Horowitz, B.P. 220, Grenoble Cedex 38043, France
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  • Mar Garcia-Hernandez,

    1. Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Cientificas, Cantoblanco 28049, Spain
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  • Elbio Dagotto,

    1. Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6071, USA
    2. Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996, USA
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  • Stephen J. Pennycook,

    1. Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6071, USA
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  • Jacobo Santamaria

    Corresponding author
    1. GFMC. Dpto. Física Aplicada III, Universidad Complutense de Madrid, Campus Moncloa, Madrid, 28040, Spain
    • GFMC. Dpto. Física Aplicada III, Universidad Complutense de Madrid, Campus Moncloa, Madrid, 28040, Spain.
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Abstract

Using X-ray absorption spectroscopy and electron energy loss spectroscopy with atomic-scale spatial resolution, experimental evidence for charge transfer at the interface between the Mott insulators Sm2CuO4 and LaFeO3 is obtained. As a consequence of the charge transfer, the Sm2CuO4 is doped with electrons and thus epitaxial Sm2CuO4/LaFeO3 heterostructures become metallic.

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