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Advanced Materials

Layer-by-Layer-Assembled Reduced Graphene Oxide/Gold Nanoparticle Hybrid Double-Floating-Gate Structure for Low-Voltage Flexible Flash Memory

Authors

  • Su-Ting Han,

    1. Department of Physics and Materials Science and Center of Super-Diamond and Advanced, Films (COSDAF), City University of Hong Kong, Kowloong Tong, Hong Kong SAR
    Current affiliation:
    1. S. T. Han and Y. Zhou contributed equally to this work.
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  • Ye Zhou,

    1. Department of Physics and Materials Science and Center of Super-Diamond and Advanced, Films (COSDAF), City University of Hong Kong, Kowloong Tong, Hong Kong SAR
    Current affiliation:
    1. S. T. Han and Y. Zhou contributed equally to this work.
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  • Chundong Wang,

    1. Department of Physics and Materials Science and Center of Super-Diamond and Advanced, Films (COSDAF), City University of Hong Kong, Kowloong Tong, Hong Kong SAR
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  • Lifang He,

    1. Department of Physics and Materials Science and Center of Super-Diamond and Advanced, Films (COSDAF), City University of Hong Kong, Kowloong Tong, Hong Kong SAR
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  • Wenjun Zhang,

    1. Department of Physics and Materials Science and Center of Super-Diamond and Advanced, Films (COSDAF), City University of Hong Kong, Kowloong Tong, Hong Kong SAR
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  • V. A. L. Roy

    Corresponding author
    1. Department of Physics and Materials Science and Center of Super-Diamond and Advanced, Films (COSDAF), City University of Hong Kong, Kowloong Tong, Hong Kong SAR
    • Department of Physics and Materials Science and Center of Super-Diamond and Advanced, Films (COSDAF), City University of Hong Kong, Kowloong Tong, Hong Kong SAR.
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Abstract

A hybrid double-floating-gate flexible memory device by utilizing an rGO-sheet monolayer and a Au NP array as upper and lower floating gates is reported. The rGO buffer layer acts as a charge-trapping layer and introduces an energy barrier between the Au NP lower floating gate and the channel. The proposed memory device demonstrates a strong improvement in both field-effect-transistor (FET) and memory characteristics.

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