Advanced Materials

Silicon p-i-n Junction Fibers

Authors

  • Rongrui He,

    1. Department of Chemistry and Materials, Research Institute, Pennsylvania State University, University Park, PA 16802, USA
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  • Todd D. Day,

    1. Department of Chemistry and Materials, Research Institute, Pennsylvania State University, University Park, PA 16802, USA
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  • Mahesh Krishnamurthi,

    1. Department of Materials Science and Engineering and Materials Research Institute, Pennsylvania State University, University Park, PA 16802, USA
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  • Justin R. Sparks,

    1. Department of Chemistry and Materials, Research Institute, Pennsylvania State University, University Park, PA 16802, USA
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  • Pier J. A. Sazio,

    1. Optoelectronic Research Centre, University of Southampton, Southampton, SO17 1BJ, UK
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  • Venkatraman Gopalan,

    1. Department of Materials Science and Engineering and Materials Research Institute, Pennsylvania State University, University Park, PA 16802, USA
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  • John V. Badding

    Corresponding author
    1. Department of Chemistry and Materials, Research Institute, Pennsylvania State University, University Park, PA 16802, USA
    • Department of Chemistry and Materials, Research Institute, Pennsylvania State University, University Park, PA 16802, USA.
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Abstract

Flexible Si p-i-n junction fibers made by high pressure chemical vapor deposition offer new opportunities in textile photovoltaics and optoelectronics, as exemplified by their photovoltaic properties, gigahertz bandwidth for photodetection, and ability to waveguide light.

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