Large-scale, uniform, vertically standing graphene with atomically thin edges are controllably synthesized on copper foil using a microwave-plasma chemical vapor deposition system. A growth mechanism for this system is proposed. This film shows excellent field-emission properties, with low turn-on field of 1.3 V μm−1, low threshold field of 3.0 V μm−1 and a large field-enhancement factor more than 10 000.
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