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Direct Observation of Hole Accumulation in Polymer Solar Cells During Device Operation using Light-Induced Electron Spin Resonance

  1. Tatsuya Nagamori1,
  2. Kazuhiro Marumoto1,2,*

Article first published online: 27 FEB 2013

DOI: 10.1002/adma.201204015

Issue

Advanced Materials

Advanced Materials

Volume 25, Issue 16, pages 2362–2367, April 24, 2013

Additional Information

How to Cite

Nagamori, T. and Marumoto, K. (2013), Direct Observation of Hole Accumulation in Polymer Solar Cells During Device Operation using Light-Induced Electron Spin Resonance. Adv. Mater., 25: 2362–2367. doi: 10.1002/adma.201204015

Author Information

  1. 1

    Division of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan

  2. 2

    Japan Science and Technology Agency (JST), PRESTO, Kawaguchi, Saitama 322-0012, Japan

*Division of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan.

Publication History

  1. Issue published online: 18 APR 2013
  2. Article first published online: 27 FEB 2013
  3. Manuscript Revised: 17 JAN 2013
  4. Manuscript Received: 25 SEP 2012

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Keywords:

  • polymer solar cells;
  • electron spin resonance;
  • hole accumulation;
  • performance deterioration;
  • organic interfaces
Thumbnail image of graphical abstract

A clear correlation between the number of accumulated holes (Nspin) in poly(3-hexylthiophene) (P3HT) and the deterioration of the performance is observed in polymer solar cells under simulated solar irradiation. The sites of hole accumulation with deep trapping levels are formed at the interfaces between P3HT:[6,6]-phenyl C61-butyric acid methyl ester (PCBM) and poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) layers.

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