A clear correlation between the number of accumulated holes (Nspin) in poly(3-hexylthiophene) (P3HT) and the deterioration of the performance is observed in polymer solar cells under simulated solar irradiation. The sites of hole accumulation with deep trapping levels are formed at the interfaces between P3HT:[6,6]-phenyl C61-butyric acid methyl ester (PCBM) and poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) layers.
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