A method for growth of large-area, selectively defined, single-crystal semiconductor material on an amorphous template has been demonstrated. In two steps, the degrees of freedom in crystal orientation have been reduced by the principle of evolutionary selection, starting with the deposition of a textured aluminum nitride seed on SiO2, and the longitudinal growth of gallium nitride single crystals. This concept enables the integration of semiconductor materials with a new range of substrates.
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