Multiple Memory States in Resistive Switching Devices Through Controlled Size and Orientation of the Conductive Filament
Version of Record online: 3 JAN 2013
Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Volume 25, Issue 10, pages 1474–1478, March 13, 2013
How to Cite
Balatti, S., Larentis, S., Gilmer, D. C. and Ielmini, D. (2013), Multiple Memory States in Resistive Switching Devices Through Controlled Size and Orientation of the Conductive Filament. Adv. Mater., 25: 1474–1478. doi: 10.1002/adma.201204097
- Issue online: 8 MAR 2013
- Version of Record online: 3 JAN 2013
- Manuscript Revised: 10 NOV 2012
- Manuscript Received: 30 SEP 2012
As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors.
Please note: Wiley Blackwell is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.