Advanced Materials

UV–Visible Spectroscopic Analysis of Electrical Properties in Alkali Metal-Doped Amorphous Zinc Tin Oxide Thin-Film Transistors

Authors

  • Keon-Hee Lim,

    1. Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Seoul 151-744, Republic of Korea
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  • Kyongjun Kim,

    1. Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Seoul 151-744, Republic of Korea
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  • Seonjo Kim,

    1. Department of Electrical and Electronic Engineering, School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-Gu, Seoul, 120-749, Republic of Korea
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  • Si Yun Park,

    1. Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Seoul 151-744, Republic of Korea
    2. Advanced Institutes of Convergence Technology, 864-1 Iui-dong, Yeongtong-gu, Suwon-si, Gyeonggi-do 443-270, Republic of Korea
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  • Hyungjun Kim,

    1. Department of Electrical and Electronic Engineering, School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-Gu, Seoul, 120-749, Republic of Korea
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  • Youn Sang Kim

    Corresponding author
    1. Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Seoul 151-744, Republic of Korea
    2. Advanced Institutes of Convergence Technology, 864-1 Iui-dong, Yeongtong-gu, Suwon-si, Gyeonggi-do 443-270, Republic of Korea
    • Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Seoul 151-744, Republic of Korea.
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Abstract

Solution-processed and alkali metals, such as Li and Na, are introduced in doped amorphous zinc tin oxide (ZTO) semiconductor TFTs, which show better electrical performance, such as improved field effect mobility, than intrinsic amorphous ZTO semiconductor TFTs. Furthermore, by using spectroscopic UV–visible analysis we propose a comprehensive technique for monitoring the improved electrical performance induced by alkali metal doping in terms of the change in optical properties. The change in the optical bandgap supported by the Burstein-Moss theory could successfully show a mobility increase that is related to interstitial doping of alkali metal in ZTO semiconductors.

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