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Unexpected Crystal and Domain Structures and Properties in Compositionally Graded PbZr1-xTixO3 Thin Films

Authors

  • R. V. K. Mangalam,

    1. Department of Materials Science and Engineering and Materials Research Laboratory, University of Illinois, Urbana-Champaign, Urbana, IL 61801, USA
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  • J. Karthik,

    1. Department of Materials Science and Engineering and Materials Research Laboratory, University of Illinois, Urbana-Champaign, Urbana, IL 61801, USA
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  • Anoop R. Damodaran,

    1. Department of Materials Science and Engineering and Materials Research Laboratory, University of Illinois, Urbana-Champaign, Urbana, IL 61801, USA
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  • Joshua C. Agar,

    1. Department of Materials Science and Engineering and Materials Research Laboratory, University of Illinois, Urbana-Champaign, Urbana, IL 61801, USA
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  • Lane W. Martin

    Corresponding author
    1. Department of Materials Science and Engineering and Materials Research Laboratory, University of Illinois, Urbana-Champaign, Urbana, IL 61801, USA
    • Department of Materials Science and Engineering and Materials Research Laboratory, University of Illinois, Urbana-Champaign, Urbana, IL 61801, USA.
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Abstract

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Synthesis of compositionally graded versions of PbZr1-xTixO3 thin films results in unprecedented strains (as large as ≈4.5 × 105 m−1) and correspondingly unexpected crystal structures, ferroelectric domain structures, and properties. This includes the observation of built-in electric fields in films as large as 200 kV/cm. Compositional and strain gradients could represent a new direction of strain-control of materials.

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