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Organic Vapor Passivation of Silicon at Room Temperature

Authors

  • Rong Yang,

    1. Department of Chemical Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA, 02139, USA
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  • Tonio Buonassisi,

    1. Department of Mechanical Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139, USA
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  • Karen K. Gleason

    Corresponding author
    1. Department of Chemical Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA, 02139, USA
    • Department of Chemical Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA, 02139, USA.
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Abstract

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A simple, inexpensive, efficient, and scalable method to create air-stable organic surface passivation layers on silicon using a vapor-phase treatment is demonstrated. A variant of initiated chemical vapor deposition is used to synthesize a thin film that acts as both a passivation layer and an antireflective coating. The lowest surface recombination velocity reported to date is achieved and maintained during prolonged exposure to air.

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