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Advanced Materials

Bandgap-Graded CdSxSe1–x Nanowires for High-Performance Field-Effect Transistors and Solar Cells

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Abstract

CdSxSe1–x nanowires with a graded bandgap along the length direction were utilized for field-effect transistors and Schottky junction solar cells. This novel type of nanowires suggests promising electronic and optoelectronic applications in the future.

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