Get access
Advanced Materials

Bandgap-Graded CdSxSe1–x Nanowires for High-Performance Field-Effect Transistors and Solar Cells



CdSxSe1–x nanowires with a graded bandgap along the length direction were utilized for field-effect transistors and Schottky junction solar cells. This novel type of nanowires suggests promising electronic and optoelectronic applications in the future.

original image
Get access to the full text of this article