Electrolyte-Gated SmCoO3 Thin-Film Transistors Exhibiting Thickness-Dependent Large Switching Ratio at Room Temperature

Authors

  • Ping-Hua Xiang,

    1. National Institute of Advanced Industrial Science and Technology (AIST), Ibaraki 305-8562, Japan
    2. CREST, Japan Science and Technology Agency, Kawaguchi 332-0012, Japan
    Current affiliation:
    1. Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai 200241, China
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  • Shutaro Asanuma,

    1. National Institute of Advanced Industrial Science and Technology (AIST), Ibaraki 305-8562, Japan
    2. CREST, Japan Science and Technology Agency, Kawaguchi 332-0012, Japan
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  • Hiroyuki Yamada,

    1. National Institute of Advanced Industrial Science and Technology (AIST), Ibaraki 305-8562, Japan
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  • Hiroshi Sato,

    1. National Institute of Advanced Industrial Science and Technology (AIST), Ibaraki 305-8562, Japan
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  • Isao H. Inoue,

    1. National Institute of Advanced Industrial Science and Technology (AIST), Ibaraki 305-8562, Japan
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  • Hiroshi Akoh,

    1. National Institute of Advanced Industrial Science and Technology (AIST), Ibaraki 305-8562, Japan
    2. CREST, Japan Science and Technology Agency, Kawaguchi 332-0012, Japan
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  • Akihito Sawa,

    Corresponding author
    1. National Institute of Advanced Industrial Science and Technology (AIST), Ibaraki 305-8562, Japan
    • National Institute of Advanced Industrial Science and Technology (AIST), Ibaraki 305-8562, Japan.

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  • Masashi Kawasaki,

    1. Quantum-Phase Electronics Center and Department of Applied Physics, University of Tokyo, Tokyo 113-8656, Japan, Correlated Electron Research Group (CERG), RIKEN Advanced Science Institute, Wako 351-0198, Japan
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  • Yoshihiro Iwasa

    1. Quantum-Phase Electronics Center and Department of Applied Physics, University of Tokyo, Tokyo 113-8656, Japan, Correlated Electron Research Group (CERG), RIKEN Advanced Science Institute, Wako 351-0198, Japan
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Abstract

original image

A Mott transistor that exhibits a large switching ratio of more than two orders at room temperature is demonstrated by using the electric double layer of an ionic liquid for gating on a strongly correlated electron system SmCoO3. From the thickness dependence of the on-state channel current, we estimate the screening length of the SmCoO3 to be ∼5 nm. The good carrier confinement within the Thomas-Fermi screening length demonstrates that the SmCoO3-channel electric double layer transistor is the first candidate for a two-dimensional Mott transistor.

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