Get access
Advanced Materials

Highly Improved Uniformity in the Resistive Switching Parameters of TiO2 Thin Films by Inserting Ru Nanodots

Authors

  • Jung Ho Yoon,

    1. WCU Hybrid Materials Program, Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea
    Search for more papers by this author
  • Jeong Hwan Han,

    1. WCU Hybrid Materials Program, Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea
    Search for more papers by this author
  • Ji Sim Jung,

    1. WCU Hybrid Materials Program, Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea
    Search for more papers by this author
  • Woojin Jeon,

    1. WCU Hybrid Materials Program, Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea
    Search for more papers by this author
  • Gun Hwan Kim,

    1. WCU Hybrid Materials Program, Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea
    Search for more papers by this author
  • Seul Ji Song,

    1. WCU Hybrid Materials Program, Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea
    Search for more papers by this author
  • Jun Yeong Seok,

    1. WCU Hybrid Materials Program, Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea
    Search for more papers by this author
  • Kyung Jean Yoon,

    1. WCU Hybrid Materials Program, Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea
    Search for more papers by this author
  • Min Hwan Lee,

    1. School of Engineering, University of California, Merced, California, 95343, USA
    Search for more papers by this author
  • Cheol Seong Hwang

    Corresponding author
    1. WCU Hybrid Materials Program, Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea
    • WCU Hybrid Materials Program, Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea.
    Search for more papers by this author

Abstract

Limiting the location where electron injection occurs at the cathode interface to a narrower region is the key factor for achieving a highly improved RS performance, which can be achieved by including Ru Nanodots. The development of a memory cell structure truly at the nanoscale with such a limiting factor for the electric-field distribution can solve the non-uniformity issue of future ReRAM.

original image
Get access to the full text of this article

Ancillary