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Advanced Materials

A Platform for Large-Scale Graphene Electronics – CVD Growth of Single-Layer Graphene on CVD-Grown Hexagonal Boron Nitride

Authors

  • Min Wang,

    1. SKKU Advanced Institute of Nanotechnology (SAINT), Center for Human Interface Nanotechnology (HINT), Samsung-SKKU Graphene Center, College of Information and Communication Engineering, Sungkyunkwan University (SKKU), Suwon 440-746, Korea
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  • Sung Kyu Jang,

    1. SKKU Advanced Institute of Nanotechnology (SAINT), Center for Human Interface Nanotechnology (HINT), Samsung-SKKU Graphene Center, College of Information and Communication Engineering, Sungkyunkwan University (SKKU), Suwon 440-746, Korea
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  • Won-Jun Jang,

    1. Department of Physics, Korea University, Seoul 136-713, Korea
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  • Minwoo Kim,

    1. SKKU Advanced Institute of Nanotechnology (SAINT), Center for Human Interface Nanotechnology (HINT), Samsung-SKKU Graphene Center, Department of Physics, Sungkyunkwan University (SKKU), Suwon 440-746, Korea
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  • Seong-Yong Park,

    1. Graphene Research Center, Samsung Advanced Institute of Technology, Yongin 446-712, Korea
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  • Sang-Woo Kim,

    1. SKKU Advanced Institute of Nanotechnology (SAINT), Center for Human Interface Nanotechnology (HINT), Samsung-SKKU Graphene Center, School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 440-746, Korea
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  • Se-Jong Kahng,

    1. Department of Physics, Korea University, Seoul 136-713, Korea
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  • Jae-Young Choi,

    1. Graphene Research Center, Samsung Advanced Institute of Technology, Yongin 446-712, Korea
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  • Rodney S. Ruoff,

    1. Department of Mechanical Engineering and the Materials Science and Engineering Program, The University of Texas at Austin, One University Station C2200, Austin, Texas 78712, USA
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  • Young Jae Song,

    Corresponding author
    1. SKKU Advanced Institute of Nanotechnology (SAINT), Center for Human Interface Nanotechnology (HINT), Samsung-SKKU Graphene Center, Department of Physics, Sungkyunkwan University (SKKU), Suwon 440-746, Korea
    • SKKU Advanced Institute of Nanotechnology (SAINT), Center for Human Interface Nanotechnology (HINT), Samsung-SKKU Graphene Center, Department of Physics, Sungkyunkwan University (SKKU), Suwon 440-746, Korea.
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  • Sungjoo Lee

    Corresponding author
    1. SKKU Advanced Institute of Nanotechnology (SAINT), Center for Human Interface Nanotechnology (HINT), Samsung-SKKU Graphene Center, College of Information and Communication Engineering, Sungkyunkwan University (SKKU), Suwon 440-746, Korea
    • SKKU Advanced Institute of Nanotechnology (SAINT), Center for Human Interface Nanotechnology (HINT), Samsung-SKKU Graphene Center, College of Information and Communication Engineering, Sungkyunkwan University (SKKU), Suwon 440-746, Korea
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Abstract

Direct chemical vapor deposition (CVD) growth of single-layer graphene on CVD-grown hexagonal boron nitride (h-BN) film can suggest a large-scale and high-quality graphene/h-BN film hybrid structure with a defect-free interface. This sequentially grown graphene/h-BN film shows better electronic properties than that of graphene/SiO2 or graphene transferred on h-BN film, and suggests a new promising template for graphene device fabrication.

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